Sintered solder for fine pitch first-level interconnect (fli) applications

ABSTRACT

Foundation layers and methods of forming a foundation layer are described. Die pads are formed over a die. A dielectric layer is formed over die pads and the die. The dielectric layer is then recessed to expose top portions of the die pads. A first plurality of sintered conductive vias are formed over the die pads. The first sintered conductive vias are coupled to at least one of the die pads. In addition, a photoresist layer may be formed over the dielectric layer and the top portions of the die pads. Via openings are formed in the photoresist layer. A second plurality of sintered conductive vias may then be formed over the first sintered conductive vias to form a plurality of sintered conductive lines. Each of the first and second sintered conductive vias are formed with a liquid phase sintering (LPS) solder paste.

FIELD

Embodiments relate to semiconductor devices. More particularly, theembodiments relate to packaging semiconductor devices with sinteredsolder for fine pitch first-level interconnect (FLI) layers.

BACKGROUND

To meet the demand for miniaturization of form factors and highperformance integration, electronic packaging technologies have providedmultiple packaging solutions. One electronic packaging solution issolder on die (SOD) with solder paste printing (SPP). For example, SODmay be used with a SPP process in an embedded multi-die interconnectpackaging technology. The SOD with SPP process enables a tall solderheight for fine pitch interconnects. SOD with SPP, however, requiresmultiple paste printings and reflows. Disadvantages of multiple reflowsare increased resist cross-linking that adversely impacts thephotoresist stripability, increased flux interaction with photoresistthat leads to flux absorption by the photoresist, and increased poststrip photoresist residue and/or missing solder.

Another disadvantage of SOD with SPP occurs during chip (or die) attachusing thermal compression bonding (TCB). A major problem encounteredduring TCB of SOD dies is the inconsistent wicking of solder on copperposts, which may lead to merged solder bumps (bridging) and non-contactopens. One common type of packaging solution that is used to reduceinconsistent wicking during TCB is solder volume reduction. Adisadvantage, however, of this solder volume reduction is that itresults in smaller chip gaps for underfills.

An additional problem of SOD with traditional solder pastes is enablingbond on trace (BOT). The packaging solution of current solder metallurgyfor BOT can result in an uncontrolled spreading of solder that leads tobump bridging and smaller chip gaps.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments described herein illustrated by way of example and notlimitation in the figures of the accompanying drawings, in which likereferences indicate similar features. Furthermore, some conventionaldetails have been omitted so as not to obscure from the inventiveconcepts described herein.

FIGS. 1-7 are cross-sectional views of a method of forming a sinteredconductive via in a foundation layer, according to one embodiment.

FIG. 8 is a process flow illustrating a method of forming a sinteredconductive via in a foundation layer, according to one embodiment.

FIGS. 9-11A are perspective views of a method of forming a sinteredconductive line in a foundation layer, according to one embodiment.

FIGS. 11B-12 are cross-sectional views of a method of forming a sinteredconductive line in a foundation layer, according to one embodiment.

FIG. 13 is a cross-sectional view of a method of forming a foundationlayer with a sintered conductive line that is staggered, according toone embodiment.

FIG. 14A is a graph illustrating a force test result on a conventionalconductive via, according to one embodiment.

FIG. 14B is a graph illustrating a force test result on a sinteredconductive via, according to one embodiment.

FIG. 15 is a schematic block diagram illustrating a computer system thatutilizes a foundation layer, according to one embodiment.

DETAILED DESCRIPTION

Described below are ways for forming ultra-fine pitch interconnects forsolder on die (SOD) using solder paste printing (SPP). Methods offorming a sintered conductive via using a liquid phase sintering (orsinterable) (LPS) solder paste are described that enable SOD withultra-fine pitch and bond on trace (BOT) with SOD. For one embodiment, afoundation layer includes a sintered conductive via formed on a die padusing an LPS paste printing process to enable ultra-fine pitches withtaller standoff heights.

Embodiments of the foundation layer enhance packaging solutions. Inaddition, embodiments of the foundation layer help to enable sinteredconductive vias with taller (or higher) bump heights and standoffheights using the LPS solder paste rather than a conventional solderpaste. Embodiments of the foundation layer utilize the LPS solder pasteto enable high aspect ratio solder bumps to overcome the limitations ofSOD with SPP, which include the need for multiple paste prints andreflows.

Embodiments of the foundation layer also help to reduce or eliminatesolder wicking and minimize the interaction of the fluxing carriermaterial with SOD resist (or photoresist). Further, embodiments of thefoundation layer facilitate the formation of LPS solder columns (alsoreferred to as sintered conductive lines), where the LPS solder columnsinclude multiple conductive vias which are stacked and sintered togetherto form ultra-fine pitch interconnects. These LPS solder columns enablehigh-bandwidth, low-loss signal transmission for current panel levelpackaging technologies (e.g., between a logic die and a peripheral die).Accordingly, the packaging solutions of the foundation layer reducesthermal budget, thereby reducing cross-linking of SOD photoresist, andreduces or eliminates solder slumping/spread.

FIGS. 1-7 are cross-sectional views of a method of forming a sinteredconductive via in a foundation layer 100. As used herein, a “LPS solderpaste printing process” (LPS SPP process) may refer to a process used toform a sintered conductive via (or a sintered conductive column/line)that enables a SOD with an ultra-fine pitch. The sintered conductivevias replace the standard paste printing of vias with an alternativeprocess that relies on LPS solder paste to define/print the sinteredconductive vias. For some embodiments, the sintered conductive viasenable SODs with ultra-fine pitch interconnects by relativelyeliminating solder wicking/spreading during the printing and reflow ofthe LPS solder paste (also referred to as LPS paste). Likewise, byimplementing the LPS SPP process, the height (or standoff height) of thesintered conductive vias can be made much taller than existing SPP viasthat are formed for SODs.

Referring now to FIG. 1, foundation layer 100 includes die pads 110, die105, dielectric layer 103, and top portions 104 of die pads 110. For oneembodiment, die pad 110 is formed over die 105 in foundation layer 100.For one embodiment, die 105 may be placed/formed over an adhesive layeror a rigid support/carrier (not shown), which can be made from astainless steel.

Foundation layer 100 may include a packaging substrate and a printedcircuit board. Foundation layer 100 may have a single photoresist layeror multiple photoresist layers, which may be stacked and stitched (alsoreferred to as sintered and/or reflowed). Foundation layer 100 may alsoinclude a plurality of silicon dies (e.g., die 105) with a plurality ofsintered solder conductive vias to form ultra-fine pitch first-levelinterconnects (FLI). For one embodiment, foundation layer 100 may alsoinclude multiple ultra-fine pitch interconnects that are stacked on topof each other and then stitched to form a sintered conductive column (orline).

Dielectric layer 103 is formed over die pad 110, die 105, and topportion 104 of die pad 110. For example, dielectric layer 103 is formedbetween the die gaps of the die pads 110. For one embodiment, dielectriclayer 103 is made of a wafer-level underfill material, such as an epoxywith filler material, which forms a non-conducting resin between diepads 110. For example, the dielectric layer 103 may be a polymermaterial, such as, for example, polyimide, epoxy, or build-up film (BF).

For some embodiments, dielectric layer 103 is then recessed (not shown)to expose top portion 104 of die pad 110. For one embodiment, dielectriclayer 103 is recessed using a mold grinding/polishing. Polished surfacealso provides a flat surface which improves the signal transmission andthe resolution of the subsequent LPS SPP process.

For other embodiments, the dielectric layer 103 may be one layer in astack that includes a plurality of dielectric layers used to form abuild-up structure. As such, the dielectric layer 103 may be formed overanother dielectric layer, photoresist layer, or seed layer (e.g., seedlayer 1311 a of FIG. 13).

FIG. 2 illustrates photoresist layer 120 deposited over die pads 110,dielectric layer 103, and die 105. For some embodiments, photoresistlayer 120 may include, but is not limited to, polyimides, epoxyacrylates, benzocyclobuten (BCB), polybenzoxazole (PBO), negative toneacrylic based resist, etc. For one embodiment, photoresist layer 120 mayprovide a via opening (e.g., via opening 122 of FIG. 4) in thefoundation layer 100 that enables a desired scalability in terms of anultra-fine pitch (e.g., <50 um) and a fine diameter (e.g., <20 um). Assuch, via openings with these desired definitions/dimensions can bedrilled through the photoresist layer 120 with a lithographical processor a laser drilling process, as shown in FIGS. 3-4.

FIG. 3 shows the formation of via openings (as shown in FIG. 4) infoundation layer 100 by using a laser ablation/drilling process, alithographical process, or any other processes known in the art. For oneembodiment, the patterning of photoresist layer 120 may be implementedwith lithographic (or laser drilling) patterning processes by exposing aradiation source (as shown by the arrows) through a routing layer mask150 and then developed with a developer.

FIG. 4 illustrates photoresist layer 120 of foundation layer 100patterned to form one or more via openings 122 over die pads 104. Forsome embodiments, the use of lithography-based (or laser-based)processes to form via openings 122 allows for the via openings 122 to beformed in any desired shape. Note that instead of being limited to theshape of the laser, a sintered conductive via (e.g., sintered via 141 ofFIG. 6) and its via opening 122 may be customized for a desired purpose.For example, whereas a laser defined via opening may be limited to acircular shape, for some embodiments, foundation layer 100 may formed tohave via openings that are rectangular or oval (in shape), or withhollow interiors that extend in a lateral direction along aconductive/transmission line.

FIG. 5 illustrates LPS solder paste 125 (also referred to as anon-collapsing solder paste) deposited into via openings 122 to formsintered conductive vias, as shown in FIG. 6. For some embodiments, asolder paste printing (SPP) process is used to deposit the LPS solderpaste 125 into each via opening 122 of the foundation layer 100, wherethe LPS solder paste 125 forms above each die pad 110 of die 105. Forexample, the LPS solder paste 125 fills up and occupies the shape of viaopening 122 that was patterned/formed on photoresist layer 120. For oneembodiment, the SPP process includes, but is not limited to, an ambientprinting, a pressure printing, a vacuum printing, or a combinationthereof.

For one embodiment, LPS solder paste 125 is formed with a sinterablepowder (e.g., sinterable filler of tin (Sn) and copper (Cu) spheres)that does not relatively collapse during reflow, and a benign carriermaterial that provides fluxing and cleanly decomposes upon hightemperature exposure.

LPS solder paste 125 may form a sintered conductive via 141 (as shown inFIG. 6) that has a taller bump height and final standoff height pastefor SOD. For one embodiment, the LPS solder paste 125 has relatively noslump properties with minimum solvent and organics (e.g., <5 wt %). Assuch, the relatively no slump characteristics of the LPS solder paste125 enable taller standoff heights (e.g., as compared to a conventionalsolder paste) without multiple paste prints and reflows, as shown inFIG. 6. Likewise, for one embodiment, the low solvents/organics of theLPS solder paste 125 minimize the interaction of a fluxing carriermaterial (not shown) with photoresist layer 120. In addition, the LPSsolder paste 125 of foundation layer 100 facilitates high aspect ratiosintered conductive vias without the need for multiple paste printingand reflow as shown in FIG. 6.

FIG. 6 illustrates the reflow/sintering process of the LPS solder paste125 as it forms sintered conductive vias 141. For example, during thereflow process of FIG. 6 the LPS solder paste 125 may be heated to belowmelting point, where the Sn—Bi alloy particles (or any low temperaturesolder) melt into liquid Sn and Bi at higher temperature, the liquid Snreacts with Cu particles as well with the adjacent metallized surface,and then the sinterable material bonds/fuses together to form thesintered conductive vias 141.

As shown in FIG. 6, the LPS solder paste 125 is sintered into viaopening 122 and thus forms the sintered conductive via 141. The tallstandoff height and relatively no wicking/spreading associated with thereflow process enables the LPS solder paste 125 solder on die (SOD) withan ultra-fine pitch. For example, a taller standoff height of thesintered conductive via 141 may improve reliability as stress mismatchcan be spread over longer distances. Likewise, as shown in FIG. 6, SODmay be implemented when the LPS solder paste 125 is sintered and formedon die pad 110 of die 105. This also enables the sintered conductive via141 to have an ultra-fine pitch, first-level interconnect.

In addition, as the LPS solder paste 125 sinters into the sinteredconductive via 141, where the no slump property of the LPS paste canresult in tall solder bumps with a single paste printing process step.In comparison, a traditional solder paste would require multipleprinting steps to achieve same solder height. Further, this minimizesthe thermal budget of foundation layer 100 and prevents overcross-linking of the photoresist layer 120, which improves theremoval/stripping of photoresist layer 120 (as shown in FIG. 7).

For some embodiments, the use of photoresist layer 120 with the LPSsolder paste 125 relatively eliminates solder wicking on Cu post andresults in sintered conductive vias 141 that have bettercoplanarity/lower bump thickness variation (BTV). In addition, anadvantage of using LPS solder paste is that the sintering material staysin its printed shape even after sintering/bonding, without reflow orspread. Lastly, once the sintered conductive vias 141 are formed,photoresist layer 120 is then removed as shown in FIG. 7. For oneembodiment, a chemical process may be used to remove photoresist layer102. Note that, according one another embodiment, a regular solder bump(e.g., SAC305, SnCu, SnAg solder, etc.) may be printed on top ofsintered conductive via 141 (i.e., the LPS conductive via may be cappedwith a regular solder bump). For example, capping a sintered conductivevia with a solder bump may allow bonding of the respective bumps to anymetal/pad finish using a conventional solder reflow/bonding process, andit may also potentially increase solder compliance. In addition, forsome embodiments, after photoresist 102 has been stripped as shown inFIG. 7, the dielectric layer 103 may also be removed. For somealternative embodiments, the photoresist 102 and the dielectric layer103 may be stripped together in a single process.

FIG. 8 is a process flow 800 illustrating a method of forming a sinteredconductive via in a foundation layer. Process flow 800 shows a method offorming a sintered conductive via as shown in FIGS. 1-7. For oneembodiment, process flow 800 may implement a lithographic (or a laser)patterning process as described herein. Process flow 800 enables asintered conductive via 141 to have an ultra-fine pitch with SOD in afoundation layer (e.g., foundation layer 100 of FIGS. 1-7).

At block 805, processing flow forms a dielectric layer and a die padover a die in a foundation layer as shown in FIG. 1. For one embodiment,the foundation layer is at least one of a substrate and a printedcircuit board. At block 810, processing flow deposits a photoresistlayer over the dielectric layer, the die pad, and the die as shown inFIG. 2. At block 815, process flow patterns the first photoresist layerwith a mask and a radiation source as shown in FIG. 3. At block 820,process flow forms a via opening (i.e., post laser ablation) over thedie pad as shown in FIG. 4. For one embodiment, one or more via openingsmay be formed over one or more die pads of the die in the foundationlayer. For another embodiment, the via opening has substantiallyvertical sidewalls.

At block 825, processing flow deposits a LPS solder paste into the viaopening to form a sintered conductive via as shown in FIG. 5. For oneembodiment, the LPS solder paste is deposited into the via opening usinga SOD with SPP process. At block 830, processing flow reflows/sintersthe LPS solder paste to form the sintered conductive via, as shown inFIG. 6. At block 835, processing flow removes the photoresist layer fromthe foundation layer as shown in FIG. 7. For one embodiment, processflow may repeat blocks 810-835 to form a sintered conductive line (orcolumn), which may include one or more sintered conductive vias that arestacked and sintered on top of each other to form the sinteredconductive column (as shown in FIGS. 12-13).

FIGS. 9-11A are perspective views of a method of forming a sinteredconductive line in a foundation layer. FIGS. 11B-12 are cross-sectionalviews of a method of forming a sintered conductive line in a foundationlayer. For one embodiment, as shown in FIG. 9, foundation layer 900includes photoresist layer 920 that may be formed from a solderphotoresist material or a polymer. For example, photoresist layer 920may have a thickness of 50 um.

FIG. 10 illustrates a plurality of via openings 922 and one or morefiducials 901 a-b that are formed on photoresist layer 920. For example,the via openings 922 formed on photoresist layer 920 have shownincreased scalability in terms of fine pitch of <50 um and finediameters of <20 um. Note that via openings of such dimensions can beformed using a lithographically or laser drilling process.

For one embodiment, fiducials 901 a-b are formed on the photoresistlayer 920 to provide alignment when the photoresist layer 920 is stackedon top or below another photoresist layer (as shown in FIG. 12). Forsome embodiments, the fiducials 901 a-b may printed or drilled intophotoresist layer 920.

FIG. 11A shows a LPS solder paste that is deposited into via openings992 to form a plurality of sintered conductive vias 941. For oneembodiment, each via opening 922 is deposited with the LPS solder paste(e.g., LPS solder paste 125 of FIG. 5), which fills up and occupies theshape of the via opening even after bonding/sintering. For anotherembodiment, a slight limitation with the printing process (or anelectroplating process as shown in FIG. 12) is the overall thickness ofthe photoresist layer 120 (i.e., the depth of the via opening), whichcan be filled at the ultra-fine openings (e.g., 20 um diameter, 40 umpitch, or finer) as described above. For example, at such ultra-finedimensions, a via opening may be filled with the LPS solder paste up tothe overall thickness of the photoresist layer 120 (e.g., 50 um) asshown in FIG. 11B.

In addition, as shown in FIG. 11B, the sintered conductive via 941 mayhave a LPS solder paste cap 942 at the top end of the sinteredconductive via 941. For one embodiment, during the SPP process, the LPSsolder paste may be slightly overprinted onto the via opening 922 toenable stitching/sintering to another stack of photoresist layer asshown in FIG. 12. Note that regular solder paste (e.g., SnAg, SnCu etc.)can be used as the overprint layer to enable stitching to other layers.

FIG. 12 shows sintered conductive lines (or columns) 1251 a-c that areformed in a foundation layer 1200. Foundation layer 1200 is similar tofoundation layer 900 of FIGS. 9-11B, however foundation layer 1200 isformed from one or more foundation layers that are stacked on top ofeach other and stitched/sintered together.

For one embodiment, foundation layer 1200 includes, but is not limitedto, photoresist layers 1220 a-d (e.g., each layer having a 50 umthickness), via openings 1222, sintered conductive vias 1241, LPS solderpaste caps 1242, and sintered conductive columns 1251 a-c. To formfoundation layer 1200, for example, one or more photoresist layers 1220a-d with via openings 1222 that are filled with LPS solder paste (orplated copper) are stacked on top of each other and aligned withfiducials (not shown).

For another embodiment, once each photoresist layer 1220 a-d are stackedtogether, the photoresist layers 1220 a-d may then be sintered/stitchedtogether, as shown by the LPS solder paste cap 1242 and bottom portion1210 of the sintered conductive via 1241 stitching together to formsintered conductive line 1251 c. For example, the photoresist layer 1220a-d may be sintered using the reflow process as described above in FIG.6. Foundation layer 1200 thus enables a plurality of sintered conductivevias 1241 to form a plurality of sintered conductive lines 1251 a-c.

In addition, foundation layer 1200 may be implemented with a SPP processin an embedded multi-die interconnect packaging, which may provide tallsolder columns for fine pitch interconnects. For example, a foundationlayer (as shown in FIG. 12) may include an interposer, such as adiscrete interposer for die-to-die bonding. As such, the foundationlayer can be used for die-to-die bonding of a central processing unit(CPU) die to a multi-chip package (MCP) die via vertical interconnects(e.g., sintered conductive lines 1251), which have a fine pitch verticalconnection between the dies. Also note that the stacked and stitchedprocess (as illustrated in FIG. 12) can be used to form multipleultra-fine interconnects in various semiconductor devices.

FIG. 13 a foundation layer 1300 formed with a plurality of sinteredconductive line 1351 a-c that are staggered (also referred to asstaggered sintered conductive lines). For alternative embodiments,foundation layer 1300 enables seed layers 1311 a-b (i.e.,electro-plating) to be stacked between photoresist layers 1320 a-c. Inaddition, conductive vias 1341 of foundation layer 1300 may be formedwith a LPS solder paste and/or a metal filling material, such as copperthat provides a high current carrying capacity over solders.

For some embodiments, seed layers 1311 a-b include a Titanium, Copper(Ti/Cu) seed layer that is sputtered. For one embodiment, to formfoundation layer 1300, a first photoresist layer 1320 a is filled withLPS solder paste to form sintered conductive vias 1341 that have LPSsolder caps 1342, where a first seed layer 1311 a is placed above theLPS solder caps 1342. Then a second photoresist layer 1320 b that hassintered conductive vias 1341 is formed above the first seed layer 1311a. Accordingly, a second seed layer 1311 b is then placed above the LPSsolder caps 1342 of the second photoresist layer 1320 b, where a thirdphotoresist layer 1320 c is thus formed above the second seed layer 1311b.

Foundation layer 1300 enables electroplating of copper in vias followedby stitching microvias with LPS solder paste. In addition, foundationlayer 1300 also facilitates stacking a layer-by-layer buildup with bothstacked and staggered vias (e.g., sintered conductive lines 1351 a-c).Note that foundation layer 1300 may be aligned with fiducials (notshown).

FIG. 14A is a graph 1400 illustrating a force test result on aconventional conductive via. FIG. 14B is a graph 1450 illustrating aforce test result on a sintered conductive via. For one embodiment,graph 1450 shows a 30 um sintered conductive via that was deformed at apeak load of 100 mN, and thus has an estimated compliance of 0.3 um/mN.Meanwhile, graph 1400 shows a conventional 40 um solder bump that wasdeformed by ˜10 um at a peak load of 100 mN, and thus has an estimatedcompliance of 0.1 um/mN. As such, graph 1450 shows that the LPS sinteredvias have about 3 times higher force/deformation compliance compared toconventional lead-free solder bumps.

FIG. 15 is a schematic block diagram illustrating a computer system thatutilizes a foundation layer, according to one embodiment. FIG. 15illustrates an example of computing device 1500. Computing device 1500houses motherboard 1502. Motherboard 1502 may include a number ofcomponents, including but not limited to processor 1504, foundationlayer 1510, and at least one communication chip 1506. Processor 1504 isphysically and electrically coupled to motherboard 1502. For someembodiments, at least one communication chip 1506 is also physically andelectrically coupled to motherboard 1502. For other embodiments, atleast one communication chip 1506 is part of processor 1504.

Depending on its applications, computing device 1500 may include othercomponents that may or may not be physically and electrically coupled tomotherboard 1502. These other components include, but are not limitedto, volatile memory (e.g., DRAM), non-volatile memory (e.g., ROM), flashmemory, a graphics processor, a digital signal processor, a cryptoprocessor, a chipset, an antenna, a display, a touchscreen display, atouchscreen controller, a battery, an audio codec, a video codec, apower amplifier, a global positioning system (GPS) device, a compass, anaccelerometer, a gyroscope, a speaker, a camera, and a mass storagedevice (such as hard disk drive, compact disk (CD), digital versatiledisk (DVD), and so forth).

At least one communication chip 1506 enables wireless communications forthe transfer of data to and from computing device 1500. The term“wireless” and its derivatives may be used to describe circuits,devices, systems, methods, techniques, communications channels, etc.,that may communicate data through the use of modulated electromagneticradiation through a non-solid medium. The term does not imply that theassociated devices do not contain any wires, although in someembodiments they might not. At least one communication chip 1506 mayimplement any of a number of wireless standards or protocols, includingbut not limited to Wi-Fi (IEEE 802.11 family), WiMAX (IEEE 802.16family), IEEE 802.20, long term evolution (LTE), Ev-DO, HSPA+, HSDPA+,HSUPA+, EDGE, GSM, GPRS, CDMA, TDMA, DECT, Bluetooth, derivativesthereof, as well as any other wireless protocols that are designated as3G, 4G, 5G, and beyond. Computing device 1500 may include a plurality ofcommunication chips 1506. For instance, a first communication chip 1506may be dedicated to shorter range wireless communications such as Wi-Fiand Bluetooth and a second communication chip 1506 may be dedicated tolonger range wireless communications such as GPS, EDGE, GPRS, CDMA,WiMAX, LTE, Ev-DO, and others.

Processor 1504 of computing device 1500 includes an integrated circuitdie packaged within processor 1504. Foundation layer 1510 may be a SODdie, a packaging substrate, and/or a printed circuit board. Foundationlayer 1510 may include one or more sintered conductive vias (e.g., LPSsintered conductive vias). Further, the one or more sintered conductivevias of foundation layer 1510 may enable BOT using SOD with SPP (e.g.,LPS solder paste) to form one or more ultra-fine pitch interconnections.For example, foundation layer 1510 may use LPS solder paste defined viasto provide LPS conductive lines (e.g., LPS solder columns or LPS solderfilled vias) that are stacked and sintered to form ultra-fine pitchinterconnects. Note that foundation layer 1510 may be a singlecomponent, a subset of components, and/or an entire system, as such LPSconductive vias may be limited to foundation layer 1510 and/or any othercomponent that requires LPS conductive vias.

For some embodiments, the integrated circuit die may be packaged withone or more devices on foundation layer 1510 that includes a thermallystable RFIC and antenna for use with wireless communications. The term“processor” may refer to any device or portion of a device thatprocesses electronic data from registers and/or memory to transform thatelectronic data into other electronic data that may be stored inregisters and/or memory.

At least one communication chip 1506 also includes an integrated circuitdie packaged within the communication chip 1506. For some embodiments,the integrated circuit die of the communication chip may be packagedwith one or more devices on foundation layer 1510, as described herein,to provide sintered conductive vias that form ultra-fine pitchinterconnects.

The following examples pertain to further embodiments. The variousfeatures of the different embodiments may be variously combined withsome features included and others excluded to suit a variety ofdifferent applications.

The following examples pertain to further embodiments:

For one embodiment, a foundation layer comprising: a plurality of diepads formed over a die; a dielectric layer formed over the plurality ofdie pads and the die, wherein the dielectric layer is recessed to exposetop portions of the plurality of die pads; and a first plurality ofsintered conductive vias formed over the plurality of die pads, whereineach of the sintered conductive vias is coupled to at least one of theplurality of die pads.

For one embodiment of the foundation layer, further comprising: aphotoresist layer formed over the dielectric layer and the top portionsof the die pads; and a plurality of via openings formed in thephotoresist layer.

For one embodiment of the foundation layer, further comprising a secondplurality of sintered conductive vias formed over the first plurality ofsintered conductive vias to form a plurality of sintered conductivelines.

For one embodiment of the foundation layer, wherein the dielectric layercomprises a polymer material.

For one embodiment of the foundation layer, wherein each sinteredconductive via is coupled to at least one die pad by the exposed topportion of the die pad formed in the dielectric layer.

For one embodiment of the foundation layer, wherein the photoresistlayer is removed after the first plurality of sintered conductive viasare formed.

For one embodiment of the foundation layer, wherein each of the firstand second sintered conductive vias are formed with a liquid phasesintering (LPS) solder paste.

For one embodiment of the foundation layer, wherein the LPS solder pastecomprises at least one of a sinterable powder and a carrier material.

For one embodiment of the foundation layer, further comprising a printedcircuit board.

For some embodiments, a method of forming a foundation layer, the methodcomprising: depositing a photoresist layer over a dielectric layer, adie pad, and a die; patterning the first photoresist layer to form a viaopening over the die pad; and depositing a LPS solder paste into the viaopening to form a first sintered conductive via, wherein the LPS solderpaste is sintered to form the first sintered conductive via.

For another embodiment, the method further comprising: forming thedielectric layer and the die pad over the die prior to depositing thephotoresist layer; and recessing the dielectric layer to expose a topportion of the die pad.

For one embodiment of the method, wherein the die comprises a pluralityof die pads.

For one embodiment of the method, wherein patterning the firstphotoresist layer comprises a mask and a radiation source.

For another embodiment, the method further comprising forming a secondsintered conductive via over the first sintered conductive via to form asintered conductive line.

For one embodiment of the method, wherein the first sintered conductivevia is coupled to the die pad by the exposed top portion of the die padformed in the dielectric layer.

For another embodiment, the method further comprising removing thephotoresist layer after the first sintered conductive via is formed.

For other embodiments, a foundation layer comprising: a first pluralityof via openings formed over a first photoresist layer; a first pluralityof sintered conductive vias formed over the first plurality of viaopenings; a second plurality of via openings formed over a secondphotoresist layer; a second plurality of sintered conductive vias formedover the second plurality of via openings; and the second photoresistlayer with the second plurality of sintered conductive vias stackedabove the first photoresist layer with the first plurality of sinteredconductive vias to form a plurality of sintered conductive lines.

For one embodiment of the foundation layer, wherein each of the sinteredconductive lines is coupled to at least one of a plurality of die padsformed over one or more dies.

For one embodiment of the foundation layer, wherein the plurality of diepads include top portions formed over the plurality of die pads, andwherein each of the sintered conductive lines is coupled to one of theplurality of die pads by the top portions of the plurality of die pads.

For one embodiment of the foundation layer, wherein each of the sinteredconductive vias and the sintered conductive lines are formed with aliquid phase sintering (LPS) solder paste.

For one embodiment of the foundation layer, wherein the LPS solder pastecomprises at least one of a sinterable powder and a carrier material.

For one embodiment of the foundation layer, further comprising a printedcircuit board.

In the foregoing specification, embodiments have been described withreference to specific exemplary embodiments thereof. It will be evidentthat various modifications may be made thereto without departing fromthe broader spirit and scope. The specification and drawings are,accordingly, to be regarded in an illustrative sense rather than arestrictive sense.

1. A foundation layer, comprising: a plurality of die pads formed over asilicon die; a dielectric layer formed over the plurality of die padsand the silicon die, wherein the dielectric layer is recessed to exposetop portions of the plurality of die pads; and a first plurality ofsintered conductive vias formed over the plurality of die pads, whereineach of the sintered conductive vias is coupled to at least one of theplurality of die pads.
 2. The foundation layer of claim 1, furthercomprising: a photoresist layer formed over the dielectric layer and thetop portions of the die pads; and a plurality of via openings formed inthe photoresist layer.
 3. The foundation layer of claim 1, furthercomprising a second plurality of sintered conductive vias formed overthe first plurality of sintered conductive vias to form a plurality ofsintered conductive lines.
 4. The foundation layer of claim 1, whereinthe dielectric layer comprises a polymer material.
 5. The foundationlayer of claim 1, wherein each sintered conductive via is coupled to atleast one die pad by the exposed top portion of the die pad formed inthe dielectric layer.
 6. (canceled)
 7. The foundation layer of claim 3,wherein each of the first and second sintered conductive vias are formedwith a liquid phase sintering (LPS) solder paste.
 8. The foundationlayer of claim 7, wherein the LPS solder paste comprises at least one ofa sinterable powder and a carrier material.
 9. The foundation layer ofclaim 1, further comprising a printed circuit board.
 10. A method offorming a foundation layer, the method comprising: depositing aphotoresist layer over a dielectric layer, a die pad, and a die;patterning the first photoresist layer to form a via opening over thedie pad; and depositing a LPS solder paste into the via opening to forma first sintered conductive via, wherein the LPS solder paste issintered to form the first sintered conductive via.
 11. The method ofclaim 10, further comprising: forming the dielectric layer and the diepad over the die prior to depositing the photoresist layer; andrecessing the dielectric layer to expose a top portion of the die pad.12. The method of claim 10, wherein the die comprises a plurality of diepads.
 13. The method of claim 10, wherein patterning the firstphotoresist layer comprises a mask and a radiation source.
 14. Themethod of claim 10, further comprising forming a second sinteredconductive via over the first sintered conductive via to form a sinteredconductive line.
 15. The method of claim 10, wherein the first sinteredconductive via is coupled to the die pad by the exposed top portion ofthe die pad formed in the dielectric layer.
 16. The method of claim 10,further comprising removing the photoresist layer after the firstsintered conductive via is formed.
 17. A foundation layer, comprising: afirst plurality of via openings formed over a first photoresist layer; afirst plurality of sintered conductive vias formed over the firstplurality of via openings; a second plurality of via openings formedover a second photoresist layer; a second plurality of sinteredconductive vias formed over the second plurality of via openings; andthe second photoresist layer with the second plurality of sinteredconductive vias stacked above the first photoresist layer with the firstplurality of sintered conductive vias to form a plurality of sinteredconductive lines.
 18. The foundation layer of claim 17, wherein each ofthe sintered conductive lines is coupled to at least one of a pluralityof die pads formed over one or more dies.
 19. The foundation layer ofclaim 18, wherein the plurality of die pads include top portions formedover the plurality of die pads, and wherein each of the sinteredconductive lines is coupled to one of the plurality of die pads by thetop portions of the plurality of die pads.
 20. The foundation layer ofclaim 17, wherein each of the sintered conductive vias and the sinteredconductive lines are formed with a liquid phase sintering (LPS) solderpaste.
 21. The foundation layer of claim 17, wherein the LPS solderpaste comprises at least one of a sinterable powder and a carriermaterial.
 22. The foundation layer of claim 17, further comprising aprinted circuit board.